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- SiC SBDs
- "Full SiC" Power Modules
- SiC-MOSFET
- 300A SiC Trench MOSFET
- Intelligent, High Heat Resistance Power Module
Overview
| Full-SiC power module integrating SiC MOSFETs and SBDs*1. An original electric field mitigation structure, along with a novel screening method, are utilized to maintain reliability and enable the development of the first mass production system for Full-SiC power modules. These new modules integrate SiC SBDs and MOSFETs, making high frequency operation above 100kHz possible (unlike conventional products). In addition,high-speed switching, combined with low-loss performance, make them ideal as replacements for 200-400A Si IGBTs. *1：Note: Custom products will be produced at the end of March, with mass production of general-purpose products beginning in June |  |
Feature 1：The industry's smallest "Full SiC" power module!
| Replacing Si IGBTs with SiC MOSFETs result in the industry's first mass production of "Full SiC" power modules. ROHM produces both SiC SBDs and SiC MOSFETs in-house, ensuring unparalleled reliability. |
Feature 2：Switching loss reduced by more than 80%
| Switching loss is significantly lower than conventional IGBT modules, |
Specifications (Standard Type)
■Absolute Maximum Ratings
MAXIMUM RATING (Tj=25ºC)
| PARAMETER | SYMBOL | RATINGS | UNIT |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 1200 | V |
| Gate-Source Voltage | VGS | -6 to ＋22 | V |
| Continuous Drain Current *1 | IDS | 120(TC=60ºC) | A |
| Repetitive peak drain curren *1 | IDRM | 240(Tc = 60ºC,Pw=1msec *2 ) | A |
| Continuous Source Current *1 | ISD | 120(TC=60ºC) | A |
| Repetitive peak source current *1 | ＩSRM | 240(Tc = 60ºC,Pw=1msec *2 ) | A |
| Junction temperature | Tjop | -40 to 150 | ºC |
| Range of storage temperature | Tstg | -40 to 125 | ºC |
| Insulation test voltage | Visol | 2500(RMS,f=60Hz,t=1min) *3 | Vrms |
| Mounting torque | - | 4.5(screw M6) | Nm |
| Terminal connection torque | - | 3.5(screw M5) | Nm |
*1:The Tc measurement point is just under the chip.
*2: Tj < 150ºC
*3: Measurement conducted based on UL1557.
The specifications are subject to change without notice
Dimensions (Unit: mm) |
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Equivalent Circuit Diagram |
| 2nd generation SiC MOSFETs are utilized, reducing ON-resistanceby 29% compared with 1st generation models. |
Applications
| Industrial equipment, EVs/HVs, solar power, and more |
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